超级电容二极管：整流与储能一体化

陈沛东; 张世从; 林天全

doi:10.19799/j.cnki.2095-4239.2026.0175

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超级电容二极管：整流与储能一体化

超级电容器关键材料与器件专刊 | 更新时间：2026-05-28

- 超级电容二极管：整流与储能一体化
- Supercapacitor diode: Rectification-storage integration
- 储能科学与技术 2026年15卷第5期页码：1862-1877
- 作者机构：
  
  上海交通大学材料科学与工程学院，上海 201100
- 作者简介：
  
  陈沛东（2003—），男，博士研究生，研究方向为超级电容二极管，E-mail：Peidong-Chen@sjtu.edu.cn；
  林天全，研究员，研究方向为高功率储能电池（超级电容器）材料与器件，E-mail：tqlin@sjtu.edu.cn。
- 基金信息：
- DOI：10.19799/j.cnki.2095-4239.2026.0175
  中图分类号： TK 02
- 收稿：2026-02-28，
  
  修回：2026-03-31，
  
  纸质出版：2026-05-28
- 稿件说明：
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陈沛东, 张世从, 林天全. 超级电容二极管:整流与储能一体化[J]. 储能科学与技术, 2026, 15(5): 1862-1877.

CHEN Peidong, ZHANG Shicong, LIN Tianquan. Supercapacitor diode: Rectification-storage integration[J]. Energy Storage Science and Technology, 2026, 15(5): 1862-1877.
陈沛东, 张世从, 林天全. 超级电容二极管:整流与储能一体化[J]. 储能科学与技术, 2026, 15(5): 1862-1877. DOI： 10.19799/j.cnki.2095-4239.2026.0175.

CHEN Peidong, ZHANG Shicong, LIN Tianquan. Supercapacitor diode: Rectification-storage integration[J]. Energy Storage Science and Technology, 2026, 15(5): 1862-1877. DOI： 10.19799/j.cnki.2095-4239.2026.0175.

摘要

生成式人工智能、自动驾驶与智能物联网的快速发展提出了对低延迟、高能效、高密度集成的硬件系统的迫切需求。整流与储能功能分立的器件架构增加了神经形态计算硬件的集成难度，同时制约了其在微型化、低功耗场景的应用。超级电容二极管作为离子电子学领域兼具整流与储能一体化功能的新型器件符合高集成度硬件系统的需求，其以离子为电荷载体，通过离子选择性筛分与电荷存储耦合机制实现单向离子输运与可逆储能功能。本文首先阐释了超级电容二极管的核心工作机理与物理模型，厘清了其与传统半导体二极管、常规电容器的机制差异，其次梳理了非法拉第体系与法拉第体系的设计策略与构效关系，明确了其性能优势与适用场景，同时构建了整流储能一体化特性的多维度性能评价体系，解析了核心性能指标的定义、算法与现存局限。此外总结了器件从双电极基础结构到三电极栅控系统的演进路径，介绍了器件微型化、柔性化制备技术与应用进展。最后指出了该器件规模化应用面临的材料、工艺、集成兼容性等核心瓶颈，展望了领域未来研究方向：深化材料构效关系解析以开发高性能适配的材料与电解质体系，同时拓展器件高频性能边界并完善统一性能评价标准。

Abstract

The rapid development of generative artificial intelligence

autonomous driving

and the intelligent Internet of Things necessitates hardware with low latency

high energy efficiency

and high-density integration. Device architectures with discrete rectification and energy storage functions complicate the integration of neuromorphic computing hardware

restricting its application in miniaturized

low-power scenarios. Supercapacitor diodes

which are emerging iontronic devices featuring integrated rectification and energy storage functions

meet the requirements of highly integrated hardware systems. By utilizing ions as charge carriers

these devices realize unidirectional ion transport and reversible energy storage through a coupled ion-selective sieving and charge storage mechanism.This work first clarifies the core operating mechanism and physical model of supercapacitor diodes

mechanistically distinguishing them from traditional semiconductor diodes and capacitors. It subsequently reviews the design strategies and structure-activity relationships of non-Faradaic and Faradaic systems

clarifying their performance advantages and applicabilities. Concurrently

this work establishes a multidimensional performance evaluation system for integrated rectification and energy storage

analyzing the definition

calculation methods

and existing limitations of core performance indicators. Additionally

it summarizes the evolution path of the devices

from the basic two-electrode structure to the three-electrode gate-controlled system

and introduces the miniaturized and flexible fabrication technologies alongside the application progress. Finally

this work identifies the core bottlenecks for the large-scale application of the devices

including materials

fabrication technologies

and integration compatibility

proposing research directions in this field: conducting in-depth analysis of material structure-activity relationships to develop high-performance matched material and electrolyte systems

expanding the high-frequency performance boundary of the devices

and improving unified performance evaluation standards.

关键词

Keywords

references

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